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SDC06
Absolute maximum ratings
Symbol VCBO VCEO VEBO IC ICP IB PT Tj Tstg Ratings 30 to 45 30 to 45 6 2
NPN With built-in avalanche diode
(Ta=25C)
External dimensions E
***
SD
Electrical characteristics
Symbol ICBO IEBO VCEO hFE VCE(sat) VFEC ton tstg tf fT Cob ES/B 40 1.2 18.0 3.6 20 50 1.2 30 400 700 Specification min typ max 10 2.8 45 2000 0.2 0.6 2.0 V V V Unit
(Ta=25C)
Unit V V V A A mA W C C C/W
Conditions VCB=30V VEB=6V IC=10mA VCE=4V, IC=0.5A IC=0.5A, IB=5mA IC=1A, IB=5mA IFEC=1A VCC 10V, IC=0.5A, IB1=5mA, IB2=0A VCE=12V, IE=-0.2A VCB=10V, f=1MHz L=10mH, Single pulse
A
mA V
3 (PW1ms, Du10%) 30 3 (Ta=25C) 150 -40 to +150 41.6
s s s
MHz pF mJ
j-a
sEquivalent circuit diagram
15,16
13,14
11,12
9,10
1
RB RBE 2
3
RB RBE 4
5
RB RBE 6
7
RB RBE 8
RB: 800 typ
RBE: 2k typ
Characteristic curves
IC-VCE Characteristics (Typical)
3
m
IB=30mA
hFE-IC Characteristics (Typical)
1000
hFE-IC Temperature Characteristics (Typical)
1000
(VCE=4V)
typ
(VCE=4V)
A
12
8mA
5mA
2
500
500
Ta=125C
IC (A)
hFE
3mA 2mA
hFE
75C 25C -30C
1
1mA
0 0
1
2
3
4
5
6
100 0.03 0.05
0.1
0.5
1
3
100 0.03 0.05
0.1
0.5
1
3
VCE (V)
IC (A)
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical)
3
VCE(sat)-IB Characteristics (Typical)
1
IC-VBE Temperature Characteristics (Typical)
(IC / IB=100)
VCE (sat) (V)
1
Ta
25
VCE (sat) (V)
2
25
C
C 75
=1
C
IC=1A
-30C
IC=0.5A
0 0.2
0.5
1
3
0 1
5
10
30
IC (A)
IB (mA)
j-a-PW Characteristics
50 3
4 3 2
PT-Ta Characteristics
5
1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation
Safe Operating Area (SOA)
1mS
j-a (C / W)
2
PT (W)
10
1
1
5
IC (A)
50 100 150
0.5
1
1 1
5
10
50 100
500 1000
0 0
0.1 5
Single Pulse Without Heatsink Ta=25C
10
50
PW (mS)
Ta (C)
VCE (V)
164

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